Open Access4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width
Author(s) -
Li Tao,
Lei Yuan,
Yanping Li,
Haiming Yu,
Wei Wang,
Qiang Kan,
Weixi Chen,
Jiaoqing Pan,
Guangzhao Ran,
Wei Wang
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.005448
Subject(s) - materials science , optoelectronics , optics , laser , silicon , waveguide , photolithography , lithography , electron beam lithography , wavelength , semiconductor laser theory , semiconductor , resist , layer (electronics) , physics , composite material
A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed feedback gratings based on selective-area metal bonding technology. The lasers have emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of about 2.0 nm. The single laser has a typical threshold current of 50 mA and side-mode suppression ratio of 20 dB. The silicon waveguides are fabricated simply by standard photolithography and holographic lithography which are CMOS compatible.