Open AccessSingle CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector
Author(s) -
Rabaya Basori,
Kaustuv Das,
Prashant Kumar,
K. S. Narayan,
A. K. Raychaudhuri
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.004944
Subject(s) - responsivity , nanowire , materials science , optoelectronics , dark current , optics , photodetector , absorption (acoustics) , detector , biasing , charge (physics) , voltage , physics , composite material , quantum mechanics
We report ultra large photo responsivity ℜ (ratio of photo-generated current to absorbed power) in a single nanowire (NW) device made from a single strand of a nanowire (diameter ~30nm and length ~200nm) of an organomettalic semiconducting charge transfer complex material of CuTCNQ. The device shows responsivity of 8x10(4) A/Watt at 1 volt applied bias with an enhancement over the dark current exceeding 10(5) at zero bias. The observed photo current has a spectral dependence that strongly follows the main absorption peak (close to 405 nm) showing the primary role of absorbed photo-generated carriers.