
Self-bending of light in photorefractive semiconductors with hot-electron effect
Author(s) -
Andrzej Ziółkowski
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.004599
Subject(s) - photorefractive effect , semiconductor , electron , optics , light beam , materials science , conductivity , nonlinear system , bending , transient (computer programming) , physics , optoelectronics , quantum mechanics , composite material , computer science , operating system
This article analyzes nonlinear light propagation in semiconductors with bipolar conductivity and nonlinear transport of electrons. We show how the competition between electron and hole conductivity can influence light propagation, leading to the self-bending effect of optical beam trajectory, which depending on the value of trap compensation coefficient may be stationary or transient.