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Strain-enhanced cable-type 3D UV photodetecting of ZnO nanowires on a Ni wire by coupling of piezotronics effect and pn junction
Author(s) -
Jixun Chen,
Long Ding,
Xianghui Zhang,
Liang Chu,
Nishuang Liu,
Yihua Gao
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.003661
Subject(s) - materials science , nanowire , heterojunction , optoelectronics , diode , photoluminescence , chemical vapor deposition , photodetector , coupling (piping) , optics , light emitting diode , composite material , physics
A 3D-sensitified and strain-enhanced UV wire-photodetector has been fabricated with ZnO NWs grown on an oxidized Ni wire by chemical vapor deposition method. The photoluminescence (PL) spectra of the device shows a sharp UV peak at around 380 nm and a negligible peak at around 520 nm, which proves that the as-prepared ZnO nanowires were well-crystallized. The current-voltage (I-V) and current-time (I-T) characteristics under different rotation angles of the heterojunctions show good rectifying diode behaviors and stability under different angles which make 3D detection possible. The sensitivity of the device is enhanced by strains due to piezotronic effect of ZnO nanowires. These performances of the device demonstrates a promising approach to 3D photodetecting and strain sensing and also provide a prospective application to the development of weaving single wire into fabrics technology.

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