Open AccessExperimental bifurcation-cascade diagram of an external-cavity semiconductor laser
Author(s) -
Byungchil Kim,
Nianqiang Li,
Alexandre Locquet,
D. S. Citrin
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.002348
Subject(s) - cascade , bifurcation , bifurcation diagram , physics , semiconductor laser theory , optics , laser , nonlinear system , robustness (evolution) , hopf bifurcation , semiconductor , mechanics , optoelectronics , quantum mechanics , chemistry , biochemistry , chromatography , gene
This Letter is the first to report experimental bifurcation diagrams of an external-cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case. Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, 1148-1151 (1999)], we present a detailed experimental investigation of the nonlinear dynamics of ECSLs and of the robustness of the cascade to changes in the current and cavity length. Also, we report for the first time a well resolved experimental Hopf bifurcation in an ECSL. Based on the Lang and Kobayashi model, we identify the dynamical regimes and the instabilities involved in the cascade, as well as the influence of the current and cavity length on the cascade.