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Vertical-coupled high-efficiency tunable III-V- CMOS SOI hybrid external-cavity laser
Author(s) -
Shiwei Lin,
Stevan S. Djordjevic,
J. E. Cunningham,
Ivan Shubin,
Ying Luo,
Jin Yao,
Guoliang Li,
Hiren Thacker,
Jinhyoung Lee,
Kannan Raj,
Xuezhe Zheng,
Ashok V. Krishnamoorthy
Publication year - 2013
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.032425
Subject(s) - materials science , silicon on insulator , lasing threshold , optoelectronics , optics , resonator , waveguide , laser , microheater , grating , silicon photonics , silicon , wavelength , fabrication , physics , medicine , alternative medicine , pathology
We demonstrate a hybrid III-V/SOI laser by vertically coupling a III-V RSOA chip with a SOI-CMOS chip containing a tunable wavelength selective reflector. We report a waveguide-coupled wall-plug-efficiency of 5.5% and output power of 10 mW. A silicon resistor-based microheater was integrated to thermally tune a ring resonator for precise lasing wavelength control. A high tuning efficiency of 2.2 nm/mW over a range of 18 nm was achieved by locally removing the SOI handler substrate. C-band single mode lasing was confirmed with a side mode suppression ratio of 35 dB. This grating coupler based vertical integration approach can be scaled up in two dimensions for efficient multi-wavelength sources in silicon photonics.

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