Open AccessRoom temperature polariton light emitting diode with integrated tunnel junction
Author(s) -
Sebastian Brodbeck,
Johannes Jahn,
Arash RahimiIman,
Julian Fischer,
M. Amthor,
S. Reitzenstein,
M. Kamp,
Christian Schneider,
Sven Höfling
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.031098
Subject(s) - electroluminescence , polariton , optoelectronics , materials science , light emitting diode , diode , photoluminescence , optics , biasing , exciton , quantum well , tunnel junction , condensed matter physics , physics , laser , quantum tunnelling , voltage , layer (electronics) , quantum mechanics , composite material
We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.