Room temperature polariton light emitting diode with integrated tunnel junction | Zendy

Sebastian Brodbeck | Zendy; Johannes Jahn | Zendy; Arash RahimiIman | Zendy; Julian Fischer | Zendy; M. Amthor | Zendy; S. Reitzenstein | Zendy; M. Kamp | Zendy; Christian Schneider | Zendy; Sven Höfling | Zendy

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Room temperature polariton light emitting diode with integrated tunnel junction

Author(s) -

Sebastian Brodbeck,

Johannes Jahn,

Arash RahimiIman,

Julian Fischer,

M. Amthor,

S. Reitzenstein,

M. Kamp,

Christian Schneider,

Sven Höfling

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.031098

Subject(s) - electroluminescence , polariton , optoelectronics , materials science , light emitting diode , diode , photoluminescence , optics , biasing , exciton , quantum well , tunnel junction , condensed matter physics , physics , laser , quantum tunnelling , voltage , layer (electronics) , quantum mechanics , composite material

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

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