Open AccessHigh-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm
Author(s) -
In Gyoo Kim,
KiSeok Jang,
Jiho Joo,
Sang-Hoon Kim,
SangGi Kim,
KwangSeong Choi,
Jin Hyuk Oh,
Sun Ae Kim,
Gyungock Kim
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.030716
Subject(s) - responsivity , photodetector , optics , materials science , optoelectronics , sensitivity (control systems) , bandwidth (computing) , germanium , silicon , physics , telecommunications , computer science , electronic engineering , engineering
We present high-sensitivity photoreceivers based on a vertical- illumination-type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f(-3dB)) of 29 GHz demonstrates the sensitivities of -10.15 dBm for 40 Gb/s data rate and -9.47 dBm for 43 Gb/s data rate, at BER of 10(-12) and λ ~1550 nm. Also a photoreceiver based on a Ge PD with f(-3dB)~19 GHz shows -14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of vertical-illumination type Ge PDs ready for practical high-speed network applications.