Open AccessSuppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates
Author(s) -
VinCent Su,
Po-Hsun Chen,
Ray-Ming Lin,
Ming-Lun Lee,
Yao-Hong You,
Chung-I Ho,
Yi-Chi Chen,
Wei-Fan Chen,
Chieh-Hsiung Kuan
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.030065
Subject(s) - quantum confined stark effect , voltage droop , light emitting diode , sapphire , materials science , optoelectronics , stark effect , diode , optics , epitaxy , quantum well , laser , electric field , physics , nanotechnology , quantum mechanics , voltage , layer (electronics) , voltage divider
This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally measured data and the ray-tracing simulation results, the suppressed efficiency droop for the InGaN-based LED having the nano-sized PCSS with a smaller space of 200 nm can be acquired due to the weaker function of the QCSE within the MQWs as a result of the smaller polarization fields coming from the lower compressive strain in the corresponding epitaxial layers.