Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect | Zendy

Yangjin Ma | Zendy; Yi Zhang | Zendy; Shuyu Yang | Zendy; Ari Novack | Zendy; Ran Ding | Zendy; Andy Eu-Jin Lim | Zendy; GuoQiang Lo | Zendy; Tom BaehrJones | Zendy; Michael Hochberg | Zendy

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Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

Author(s) -

Yangjin Ma,

Yi Zhang,

Shuyu Yang,

Ari Novack,

Ran Ding,

Andy Eu-Jin Lim,

GuoQiang Lo,

Tom BaehrJones,

Michael Hochberg

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.029374

Subject(s) - silicon on insulator , materials science , insertion loss , wafer , optoelectronics , optics , lithography , optical interconnect , silicon , waveguide , crosstalk , electron beam lithography , silicon photonics , layer (electronics) , interconnection , resist , telecommunications , nanotechnology , physics , computer science

We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.009 dB for the 1550 nm device and - 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.

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