Open AccessUltralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect
Author(s) -
Yangjin Ma,
Yi Zhang,
Shaoshi Yang,
Ari Novack,
Ran Ding,
Andy Eu-Jin Lim,
GuoQiang Lo,
Tom BaehrJones,
Michael Hochberg
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.029374
Subject(s) - materials science , silicon on insulator , insertion loss , optoelectronics , wafer , lithography , optics , optical interconnect , silicon , crosstalk , waveguide , electron beam lithography , silicon photonics , interconnection , layer (electronics) , resist , telecommunications , nanotechnology , physics , computer science
We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.009 dB for the 1550 nm device and - 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.