Open Access155-μm VCSEL with polarization-independent HCG mirror on SOI
Author(s) -
Yoshihiro Tsunemi,
Nobuhide Yokota,
Shota Majima,
Kazuhiro Ikeda,
T. Katayama,
Hitoshi Kawaguchi
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.028685
Subject(s) - materials science , lasing threshold , optoelectronics , vertical cavity surface emitting laser , optics , silicon on insulator , active layer , polarization (electrochemistry) , wafer , distributed bragg reflector , laser , silicon , layer (electronics) , physics , chemistry , wavelength , composite material , thin film transistor
We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) incorporating a polarization-independent high-index-contrast subwavelength grating (HCG) mirror on silicon-on-insulator (SOI) for a novel polarization-bistable device on a silicon substrate. The VCSEL consists of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.55 μm, and an Al0.9Ga0.1As/Al0.16Ga0.84As DBR. We used direct wafer bonding for the bonding between the active layer and the AlGaAs DBR, and benzocyclobutene (BCB) bonding for the bonding between the active layer and the polarization-independent HCG mirror. The reflectivity of the HCG embedded with BCB was measured, resulting in a 200-nm-high reflectivity band with reflectivity higher than 99% and a small polarization dependence of ± 1%. We achieved lasing of the fabricated HCG-VCSEL at 1527 nm under an optical short pulse excitation with an average power of 50 mW (~0.2 mJ/cm2) at 240 K.