Open AccessBroadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions
Author(s) -
Rishi Maiti,
Santanu Manna,
Anupam Midya,
S. K. Ray
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.026034
Subject(s) - materials science , optoelectronics , heterojunction , photocurrent , rectification , graphene , diode , photodetector , broadband , silicon , oxide , dark current , optics , nanotechnology , physics , power (physics) , quantum mechanics , metallurgy
We report a novel graphene oxide (GO) based p-n heterojunction on n-Si. The fabricated vertical GO/n-Si heterojunction diode shows a very low leakage current density of 0.25 µA/cm(2) and excellent rectification characteristics upto 1 MHz. The device on illumination shows a broadband (300-1100 nm) spectral response with a characteristic peak at ~700 nm, in agreement with the photoluminescence emission from GO. Very high photo-to-dark current ratio (>10(5)) is observed upon illumination of UV light. The transient photocurrent measurements indicate that the GO based heterojunction diodes can be useful for UV and broadband photodetectors, compatible with silicon device technology.