Linear array of InAs APDs operating at 2 µm | Zendy

Ian Sandall | Zendy; Shiyong Zhang | Zendy; Chee Hing Tan | Zendy

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Linear array of InAs APDs operating at 2 µm

Author(s) -

Ian Sandall,

Shiyong Zhang,

Chee Hing Tan

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.025780

Subject(s) - apds , avalanche photodiode , responsivity , optics , dark current , pixel , materials science , wavelength , optoelectronics , photodetector , physics , detector

A linear array of avalanche photodiodes (APDs) comprising of 128 pixels was fabricated from InAs. The uniformity of the dark currents and avalanche gain was investigated at 77, 200 K and room temperature. The array shows highly uniform results apart from some defective pixels at the edge of the arrays. At 200 K and at a wavelength of 2.04 µm, we obtained an unmultiplied responsivity of 0.61 A/W at 0 V, along with a gain of 8.5 at a bias of 10 V.

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