Open AccessLinear array of InAs APDs operating at 2 µm
Author(s) -
Ian Sandall,
Shiyong Zhang,
Chee Hing Tan
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.025780
Subject(s) - apds , avalanche photodiode , responsivity , optics , dark current , pixel , materials science , wavelength , optoelectronics , photodetector , physics , detector
A linear array of avalanche photodiodes (APDs) comprising of 128 pixels was fabricated from InAs. The uniformity of the dark currents and avalanche gain was investigated at 77, 200 K and room temperature. The array shows highly uniform results apart from some defective pixels at the edge of the arrays. At 200 K and at a wavelength of 2.04 µm, we obtained an unmultiplied responsivity of 0.61 A/W at 0 V, along with a gain of 8.5 at a bias of 10 V.