Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes | Zendy

Chengxiao Du | Zendy; Tongbo Wei | Zendy; Haiyang Zheng | Zendy; Liancheng Wang | Zendy; Chong Geng | Zendy; Qingfeng Yan | Zendy; Junxi Wang | Zendy; Jinmin Li | Zendy

Open Access

Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes

Author(s) -

Chengxiao Du,

Tongbo Wei,

Haiyang Zheng,

Liancheng Wang,

Chong Geng,

Qingfeng Yan,

Junxi Wang,

Jinmin Li

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.025373

Subject(s) - light emitting diode , materials science , photonic crystal , optoelectronics , diode , total internal reflection , optics , hexagonal crystal system , layer (electronics) , gallium nitride , nanotechnology , physics , crystallography , chemistry

Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.

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