Open AccessSize-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes
Author(s) -
Cheng Du,
Tongbo Wei,
Hui Zheng,
Liancheng Wang,
Chong Geng,
Qingfeng Yan,
Junxi Wang,
Jinmin Li
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.025373
Subject(s) - light emitting diode , materials science , photonic crystal , optoelectronics , diode , total internal reflection , optics , hexagonal crystal system , layer (electronics) , gallium nitride , nanotechnology , physics , crystallography , chemistry
Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.