Open AccessOptical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys
Author(s) -
Shunfei Fan,
Zhixin Qin,
Chenguang He,
Mengjun Hou,
Xinqiang Wang,
Bo Shen,
Wei Li,
Weiying Wang,
Defeng Mao,
Peng Jin,
Jianchang Yan,
Peng Dong
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.024497
Subject(s) - exciton , wurtzite crystal structure , laser linewidth , photoluminescence , spectroscopy , materials science , picosecond , condensed matter physics , ultraviolet , optics , physics , optoelectronics , laser , diffraction , quantum mechanics
The exciton localization in wurtzite AlxGa₁-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa₁-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.