Open AccessIntrinsic photocurrent characteristics of graphene photodetectors passivated with Al_2O_3
Author(s) -
Chang Goo Kang,
Sang Kyung Lee,
Sunhee Choe,
Young Gon Lee,
Chang Lyoul Lee,
Byoung Hun Lee
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.023391
Subject(s) - photocurrent , graphene , photodetector , passivation , materials science , optoelectronics , layer (electronics) , photoconductivity , optics , chemical vapor deposition , nanotechnology , physics
The intrinsic photo-response of chemical vapor deposited (CVD) graphene photodetectors were investigated after eliminating the influence of photodesorption using an atomic layer deposited (ALD) Al₂O₃ passivation layer. A general model describing the intrinsic photocurrent generation in a graphene is developed using the relationship between the device dimensions and the level of intrinsic photocurrent under UV illumination.