Open AccessInGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact
Author(s) -
Duk-Jo Kong,
SiYoung Bae,
ChangMo Kang,
Dong-Seon Lee
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.022320
Subject(s) - materials science , light emitting diode , optoelectronics , diode , metal , optics , contact resistance , optical transparency , wide bandgap semiconductor , composite material , layer (electronics) , metallurgy , physics
In this study, we produce InGaN/GaN microcolumn LED (MC-LED) arrays having nonpolar metal sidewall contacts using a top-down method, where the metal contacts only with the sidewall of the columnar LEDs with an open top for transparency. The trapezoidal profile of the as-etched columns was altered to a rectangular profile through KOH treatment, exposing the nonpolar sidewalls. While the MC-LED with no treatment emitted no light because of the etch-damaged region, the MC-LEDs with KOH treatment exhibited much improved the electrical properties with the much higher shunt resistance due to the removal of the etch-damaged region. The optical output power was strongest for the MC-LED with a 5-min treatment indicating an almost complete removal of the damaged region.