Open AccessHigh performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO_2/Al_2O_3 passivation layers and TiO_2/Al_2O_3 DBR backside reflector
Author(s) -
Hao Guo,
Xiong Zhang,
Hongjun Chen,
Peiyuan Zhang,
Honggang Liu,
Hudong Chang,
Wei Zhao,
Qinghua Liao,
Yiping Cui
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.021456
Subject(s) - passivation , materials science , optoelectronics , sapphire , light emitting diode , atomic layer deposition , layer (electronics) , composite number , distributed bragg reflector , substrate (aquarium) , wafer , diode , optics , wavelength , laser , nanotechnology , composite material , oceanography , physics , geology
GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.