Open AccessHigh-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers
Author(s) -
Min Seok Oh,
Hyunsoo Kim
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.020857
Subject(s) - light emitting diode , materials science , optoelectronics , diode , optics , electrode , contact angle , composite material , chemistry , physics
The authors report high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with identical Ag contact formed on both n- and p-layers. Ag contacts thermally annealed at optimized conditions yielded low specific contact resistances of 4.5 × 10(-4) and 9.4 × 10(-4) Ωcm(2), and high optical reflectivity (at 450 nm) of 88.1 and 85.3% for n- and p-contact, respectively. LEDs fabricated with identical Ag contacts formed on both layers showed 31% brighter light output power and nearly the same forward voltages as compared to reference LEDs. This indicates that Ag contact can be used as a reflective electrode for both n- and p-layers, leading to enhanced extraction efficiency and fewer process steps.