Local bandgap control of germanium by silicon nitride stressor | Zendy

Ryo Kuroyanagi | Zendy; Luan M. Nguyen | Zendy; Tai Tsuchizawa | Zendy; Yasuhiko Ishikawa | Zendy; Koji Yamada | Zendy; Kazumi Wada | Zendy

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Local bandgap control of germanium by silicon nitride stressor

Author(s) -

Ryo Kuroyanagi,

Luan M. Nguyen,

Tai Tsuchizawa,

Yasuhiko Ishikawa,

Koji Yamada,

Kazumi Wada

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.018553

Subject(s) - germanium , materials science , optoelectronics , photonics , silicon , strain (injury) , optics , band gap , modulation (music) , absorption edge , absorption (acoustics) , silicon nitride , photonic crystal , nitride , nanotechnology , physics , composite material , medicine , layer (electronics) , acoustics

We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 - 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiN(x) stressor films and Franz-Keldysh effect in strain-controlled Ge.

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