Open AccessLocal bandgap control of germanium by silicon nitride stressor
Author(s) -
Ryo Kuroyanagi,
Luan M. Nguyen,
Tai Tsuchizawa,
Yasuhiko Ishikawa,
Koji Yamada,
Kazumi Wada
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.018553
Subject(s) - germanium , materials science , optoelectronics , photonics , silicon , strain (injury) , optics , band gap , modulation (music) , absorption edge , absorption (acoustics) , silicon nitride , photonic crystal , nitride , nanotechnology , physics , composite material , medicine , layer (electronics) , acoustics
We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 - 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiN(x) stressor films and Franz-Keldysh effect in strain-controlled Ge.