Open AccessImproved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata
Author(s) -
ZiHui Zhang,
Swee Tiam Tan,
Wei Liu,
Zhengang Ju,
Ke Zheng,
Zabu Kyaw,
Yun Ji,
Namig Hasanov,
Xiao Wei Sun,
Hilmi Volkan Demir
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.017670
Subject(s) - materials science , optoelectronics , light emitting diode , layer (electronics) , gallium nitride , diode , wide bandgap semiconductor , indium gallium nitride , optics , nanotechnology , physics
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