
Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor
Author(s) -
Mark E. Barnes,
Sam A. Berry,
Paul C. Gow,
Duncan McBryde,
G.J. Daniell,
Harvey E. Beere,
D. A. Ritchie,
Vasilis Apostolopoulos
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.016263
Subject(s) - terahertz radiation , optics , materials science , semiconductor , optoelectronics , carrier lifetime , radiation , terahertz spectroscopy and technology , diffusion , ultrashort pulse , laser , physics , silicon , thermodynamics
Pulses of coherent terahertz radiation can be efficiently generated by a lateral diffusion current after ultrafast generation of photo-carriers near a metal interface on the surface of a semiconductor, this is known as the lateral photo-Dember effect. We investigate how the emission depends on the pump spot position, size, power and how it is affected by the application of an applied external bias. We study the role of the metallic mask and how it suppresses emission from the carriers diffusing under it due to a reduction of available radiation states both theoretically and experimentally.