Open AccessMatching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators
Author(s) -
Stefan Meister,
H. Rhee,
Aws Al-Saadi,
Bülent A. Franke,
Sebastian Kupijai,
Christoph Theiss,
Lars Zimmermann,
Bernd Tillack,
H. Richter,
Hao Tian,
David Stolarek,
Thomas Schneider,
U. Woggon,
Hans Joachim Eichler
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.016210
Subject(s) - materials science , resonator , optoelectronics , diode , optics , doping , silicon , photonics , photonic crystal , physics
In this article a new method is presented that allows for low loss implementation of fast carrier transport structures in diffraction limited photonic crystal resonators. We utilize a 'node-matched doping' process in which precise silicon doping results in comb-like shaped, highly-doped diode areas that are matched to the spatial field distribution of the optical modes of a Fabry-Pérot resonator. While the doping is only applied to areas with low optical field strength, the intrinsic diode region overlaps with an optical field maximum. The presented node-matched diode-modulators, combining small size, high-speed, thermal stability and energy-efficient switching could become the centerpiece for monolithically integrated transceivers.