Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch | Zendy

Jijun Feng | Zendy; R. Akimoto | Zendy; Shin-ichiro Gozu | Zendy; T. Mozume | Zendy; Toshifumi Hasama | Zendy; Hiroshi Ishikawa | Zendy

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Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch

Author(s) -

Jijun Feng,

R. Akimoto,

Shin-ichiro Gozu,

T. Mozume,

Toshifumi Hasama,

Hiroshi Ishikawa

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.015840

Subject(s) - materials science , optoelectronics , blueshift , transmittance , optics , ion implantation , annealing (glass) , ion , physics , photoluminescence , quantum mechanics , composite material

We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

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