Open AccessNanosecond pulsed laser damage characteristics of HfO_2/SiO_2 high reflection coatings irradiated from crystal-film interface
Author(s) -
Xinbin Cheng,
Hongfei Jiao,
Jiangtao Li,
Bin Ma,
Zhanshan Wang
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.014867
Subject(s) - materials science , crystal (programming language) , irradiation , laser , optics , nano , reflection (computer programming) , coating , layer (electronics) , electric field , optoelectronics , thin film , composite material , nanotechnology , physics , quantum mechanics , computer science , nuclear physics , programming language
The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.