Open AccessSurface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating
Author(s) -
Haosu Zhang,
Jun Zhu,
Zhihong Zhu,
Yuanhao Jin,
Qunqing Li,
Guofan Jin
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.013492
Subject(s) - materials science , grating , surface plasmon , optoelectronics , gallium nitride , optics , quantum efficiency , light emitting diode , indium gallium nitride , plasmon , nano , rigorous coupled wave analysis , lithography , diffraction grating , photoluminescence , extraordinary optical transmission , purcell effect , spontaneous emission , surface plasmon polariton , laser , nanotechnology , layer (electronics) , physics , composite material
A multilayered metallic M-shaped nano-grating is proposed to enhance the internal quantum efficiency, light extraction efficiency and surface-plasmon (SP) extraction efficiency of the gallium nitride-based light emitting diodes. This structure is fabricated by the low-cost nano-imprint lithography. The suitable grating based on quasi-symmetrical-waveguide structure has a high transmission in the visible region. The properties of SP mode and the Purcell effect in this type of LED is investigated. The experimental results demonstrate that its peak photoluminescence intensity of the proposed LED is over 10 times greater than that from a naked GaN-LED without any nanostructure.