Open Access50-Gb/s silicon optical modulator with traveling-wave electrodes
Author(s) -
Xiaoguang Tu,
Tsung-Yang Liow,
Junfeng Song,
Xianshu Luo,
FengLing Qing,
Mingbin Yu,
GuoQiang Lo
Publication year - 2013
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.012776
Subject(s) - optics , extinction ratio , electro optic modulator , materials science , phase modulation , phase shift module , interferometry , optical modulator , silicon , modulation (music) , bandwidth (computing) , insertion loss , dc bias , optoelectronics , physics , wavelength , telecommunications , phase noise , voltage , quantum mechanics , acoustics , computer science
We demonstrate silicon Mach-Zehnder Interferometer (MZI) optical modulator with 50.1-Gb/s data rate and 5.56 dB dynamic extinction ratios. The phase shifter is composed by a 4 mm-long reverse-biased p-n junction with a modulation efficiency (V(π) · L(π)) of ~26.7 V · mm and phase shifter loss of ~1.04 dB/mm at V(bias) = -6 V. The measured electro-optic bandwidth reaches 25.6 GHz at V(bias) = -5 V. Compensation doping method and low loss traveling-wave electrodes are utilized to improve the modulator performance. Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application.