50-Gb/s ring-resonator-based silicon modulator | Zendy

Takeshi Baba | Zendy; Suguru Akiyama | Zendy; Masahiko Imai | Zendy; Naoki Hirayama | Zendy; Hiroyuki Takahashi | Zendy; Yoshiji Noguchi | Zendy; Tsuyoshi Horikawa | Zendy; Tatsuya Usuki | Zendy

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50-Gb/s ring-resonator-based silicon modulator

Author(s) -

Takeshi Baba,

Suguru Akiyama,

Masahiko Imai,

Naoki Hirayama,

Hiroyuki Takahashi,

Yoshiji Noguchi,

Tsuyoshi Horikawa,

Tatsuya Usuki

Publication year - 2013

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.011869

Subject(s) - resonator , optics , insertion loss , materials science , silicon , pin diode , waveguide , diode , optoelectronics , optical ring resonators , grating , silicon photonics , ring (chemistry) , phase modulation , physics , phase noise , chemistry , organic chemistry

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.

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