Open Access50-Gb/s ring-resonator-based silicon modulator
Author(s) -
Toshihide Baba,
Suguru Akiyama,
Masahiko Imai,
Naoki Hirayama,
Hiroyuki Takahashi,
Yoshiji Noguchi,
Tsuyoshi Horikawa,
Tatsuya Usuki
Publication year - 2013
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.011869
Subject(s) - resonator , optics , materials science , insertion loss , silicon , pin diode , waveguide , diode , optoelectronics , grating , silicon photonics , ring (chemistry) , optical ring resonators , phase modulation , physics , phase noise , chemistry , organic chemistry
We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.