Open AccessMeasurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets
Author(s) -
Wu Jian,
Yin Ning,
Fenglei Zhou,
Mingqi Yang,
X Zhang,
J Zhang,
Gao Shang
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.010335
Subject(s) - amplified spontaneous emission , semiconductor optical gain , laser , semiconductor laser theory , semiconductor , optics , spectral line , optoelectronics , materials science , gain , spontaneous emission , quantum well , high gain antenna , polarization (electrochemistry) , enhanced data rates for gsm evolution , active laser medium , physics , laser power scaling , telecommunications , chemistry , computer science , astronomy
In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra.