Open AccessEnhanced performance of InGaN/GaN based solar cells with an In_005Ga_095N ultra-thin inserting layer between GaN barrier and In_02Ga_08N well
Author(s) -
Zhiwei Ren,
Chao Liu,
Xin Chen,
Bin Zhao,
Xinfu Wang,
Jinhui Tong,
Jun Zhang,
Zhuo Xiang-Jing,
Danwei Li,
Yi Han-Xiang,
Shuti Li
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.007118
Subject(s) - materials science , optoelectronics , layer (electronics) , quantum efficiency , photovoltaic system , short circuit , indium , open circuit voltage , indium gallium nitride , current density , voltage , optics , gallium nitride , nanotechnology , electrical engineering , physics , engineering , quantum mechanics
The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.