Open AccessLarge current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo–optic 2 × 2 Mach–Zehnder switch
Author(s) -
Guangwei Cong,
Takashi Matsukawa,
Tadashi Chiba,
Hirofumi Tadokoro,
Masashi Yanagihara,
Morifumi Ohno,
Hitoshi Kawashima,
H. Kuwatsuka,
Yasushi Igarashi,
Meishoku Masahara,
Hiroshi Ishikawa
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.006889
Subject(s) - mosfet , silicon on insulator , mach–zehnder interferometer , materials science , optoelectronics , photonics , wafer , optical switch , transistor , field effect transistor , interferometry , silicon photonics , optics , silicon , electrical engineering , voltage , physics , engineering
n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.