Open AccessA 340-nm-band ultraviolet laser diode composed of GaN well layers
Author(s) -
Yoshifumi Yamashita,
Masakazu Kuwabara,
Kazuo Torii,
Harumasa Yoshida
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.003133
Subject(s) - materials science , laser , ultraviolet , optoelectronics , optics , diode , wavelength , laser diode , quantum well , physics
We have demonstrated the laser operation of a short-wavelength ultraviolet laser diode with multiple-quantum-wells composed of GaN well layers. The laser action has been achieved in 340-nm-band far from the wavelength corresponding to GaN band gap under the pulsed current mode at room temperature. The device has been realized on the Al(0.2)Ga(0.8)N underlying layer. The AlN mole fraction of the underlying layer is 0.1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode.