Open AccessHigh quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy
Author(s) -
Christian Tessarek,
George Sarau,
M. Kiometzis,
Silke Christiansen
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.002733
Subject(s) - rod , materials science , epitaxy , sapphire , whispering gallery wave , metalorganic vapour phase epitaxy , optics , optoelectronics , phase (matter) , molecular beam epitaxy , nanotechnology , laser , chemistry , resonator , medicine , alternative medicine , physics , organic chemistry , layer (electronics) , pathology
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo- and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods.