Open AccessDemonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer
Author(s) -
Mackenzie A. Van Camp,
Solomon Assefa,
Douglas M. Gill,
Tymon Barwicz,
Steven M. Shank,
Philip M. Rice,
Teya Topuria,
William M. J. Green
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.028009
Subject(s) - extinction ratio , optics , electro optic modulator , modulation (music) , interferometry , figure of merit , optical modulator , mach–zehnder interferometer , materials science , silicon , nanophotonics , phase modulation , optoelectronics , silicon photonics , physics , wavelength , phase noise , acoustics
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a V(π)∙L figure of merit of 0.12V∙mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.