Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer | Zendy

Mackenzie A. Van Camp | Zendy; Solomon Assefa | Zendy; D. M. Gill | Zendy; Tymon Barwicz | Zendy; Steven M. Shank | Zendy; Philip M. Rice | Zendy; Teya Topuria | Zendy; William M. J. Green | Zendy

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Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer

Author(s) -

Mackenzie A. Van Camp,

Solomon Assefa,

D. M. Gill,

Tymon Barwicz,

Steven M. Shank,

Philip M. Rice,

Teya Topuria,

William M. J. Green

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.028009

Subject(s) - extinction ratio , optics , modulation (music) , electro optic modulator , interferometry , materials science , optical modulator , figure of merit , silicon , mach–zehnder interferometer , nanophotonics , optoelectronics , phase modulation , silicon photonics , wavelength , physics , phase noise , acoustics

We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a V(π)∙L figure of merit of 0.12V∙mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.

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