Open AccessValence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells
Author(s) -
Huimin Lu,
Tongjun Yu,
Gao Yuan,
Chuan-Lei Jia,
Genxiang Chen,
Guoyi Zhang
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.027384
Subject(s) - materials science , quantum well , polarization (electrochemistry) , valence (chemistry) , ultraviolet , wavelength , emission intensity , spontaneous emission , valence band , light emitting diode , optoelectronics , photoluminescence , optics , molecular physics , condensed matter physics , physics , chemistry , laser , band gap , quantum mechanics
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.