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Quantum dot selective area intermixing for broadband light sources
Author(s) -
Kang Zhou,
Qi Jiang,
Z. Y. Zhang,
siyan chen,
H. Y. Liu,
Lu Zeng,
K. Kennedy,
Stephen J. Matcher,
R. A. Hogg
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.026950
Subject(s) - optics , optical coherence tomography , quantum dot , materials science , broadband , optoelectronics , interferometry , bandwidth (computing) , rayleigh scattering , physics , telecommunications , computer science
We report a comparison of different capping materials on the intermixing of modulation p-doped InAs/In(Ga)As quantum dots (QD). QD materials with different caps are shown to exhibit significant difference in their optical properties during the annealing process. The selective area intermixing technique is demonstrated to laterally integrate two and three different QD light emitting devices with a single electrical contact. A spectral bandwidth of 240nm centered at 1188nm is achieved in a device with two sections. By calculating the point spread function for the obtained emission spectra, and applying the Rayleigh criteria for resolution, an axial resolution of 3.5μm is deduced. A three section device realizes a spectral bandwidth of 310nm centered at 1145nm. This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherence-based systems applications.

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