Open AccessA 25 Gbps silicon microring modulator based on an interleaved junction
Author(s) -
J.J. Rosenberg,
W. M.J. Green,
Solomon Assefa,
Douglas M. Gill,
Tymon Barwicz,
Min Yang,
Steve Shank,
Yurii A. Vlasov
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.026411
Subject(s) - insertion loss , optics , materials science , silicon , optoelectronics , phase shift module , phase modulation , optical modulator , physics , phase noise
A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V(π)L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.