A 25 Gbps silicon microring modulator based on an interleaved junction | Zendy

Jessie Rosenberg | Zendy; W. M. J. Green | Zendy; S. Assefa | Zendy; D. M. Gill | Zendy; Tymon Barwicz | Zendy; Min Yang | Zendy; S. M. Shank | Zendy; Yurii A. Vlasov | Zendy

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A 25 Gbps silicon microring modulator based on an interleaved junction

Author(s) -

Jessie Rosenberg,

W. M. J. Green,

S. Assefa,

D. M. Gill,

Tymon Barwicz,

Min Yang,

S. M. Shank,

Yurii A. Vlasov

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.026411

Subject(s) - insertion loss , optics , materials science , silicon , optoelectronics , phase shift module , phase modulation , optical modulator , power consumption , power (physics) , physics , phase noise , quantum mechanics

A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V(π)L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

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