Open AccessImproving CMOS-compatible Germanium photodetectors
Author(s) -
Guoliang Li,
Ying Luo,
Xuezhe Zheng,
G. Masini,
Attila Mekis,
Subal Sahni,
Hiren Thacker,
Jin Yao,
Ivan Shubin,
Kannan Raj,
J. E. Cunningham,
Ashok V. Krishnamoorthy
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.026345
Subject(s) - photodetector , germanium , responsivity , materials science , optoelectronics , optics , cmos , capacitance , silicon , physics , electrode , quantum mechanics
We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.