Improving CMOS-compatible Germanium photodetectors | Zendy

Guoliang Li | Zendy; Ying Luo | Zendy; Xuezhe Zheng | Zendy; G. Masini | Zendy; Attila Mekis | Zendy; Subal Sahni | Zendy; Hiren Thacker | Zendy; Jin Yao | Zendy; Ivan Shubin | Zendy; Kannan Raj | Zendy; J. E. Cunningham | Zendy; Ashok V. Krishnamoorthy | Zendy

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Improving CMOS-compatible Germanium photodetectors

Author(s) -

Guoliang Li,

Ying Luo,

Xuezhe Zheng,

G. Masini,

Attila Mekis,

Subal Sahni,

Hiren Thacker,

Jin Yao,

Ivan Shubin,

Kannan Raj,

J. E. Cunningham,

Ashok V. Krishnamoorthy

Publication year - 2012

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.026345

Subject(s) - photodetector , germanium , responsivity , materials science , optoelectronics , optics , cmos , capacitance , silicon , physics , electrode , quantum mechanics

We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

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