Open AccessEngineering heavily doped silicon for broadband absorber in the terahertz regime
Author(s) -
Mingbo Pu,
Min Wang,
Chenggang Hu,
Cheng Huang,
Zeyu Zhao,
Yanqin Wang,
Xiangang Luo
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.025513
Subject(s) - terahertz radiation , materials science , silicon , broadband , doping , optics , grating , optoelectronics , wafer , absorption (acoustics) , terahertz spectroscopy and technology , bandwidth (computing) , telecommunications , physics , computer science , composite material
Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration.