Open AccessElectroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
Author(s) -
Hyunik Park,
Byung Jae Kim,
Jihyun Kim
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.025249
Subject(s) - nanorod , materials science , electroluminescence , light emitting diode , optoelectronics , electric field , sapphire , wafer , diode , gallium nitride , substrate (aquarium) , optics , nanotechnology , layer (electronics) , laser , oceanography , physics , quantum mechanics , geology
We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO(2) nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO(2)/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.