Open AccessPhotoluminescence efficiency droop and stimulated recombination in GaN epilayers
Author(s) -
J. Mickevičius,
Jonas Jurkevičius,
Michael Shur,
Jinwei Yang,
R. Gaška,
Г. Тамулайтис
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.025195
Subject(s) - voltage droop , photoluminescence , materials science , spontaneous emission , recombination , optoelectronics , light emitting diode , enhanced data rates for gsm evolution , emission intensity , optics , excitation , physics , laser , chemistry , voltage , computer science , telecommunications , biochemistry , quantum mechanics , voltage divider , gene
The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.