Open AccessLight-extraction enhancement and directional emission control of GaN-based LEDs by self-assembled monolayer of silica spheres
Author(s) -
Hee Kwan Lee,
Yeong Hwan Ko,
Ganji Seeta Rama Raju,
Yun Suk Huh
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.025058
Subject(s) - tetraethyl orthosilicate , light emitting diode , materials science , monolayer , indium tin oxide , spheres , optoelectronics , optics , layer (electronics) , nanotechnology , physics , astronomy
The light extraction of 1 × 1 mm(2) GaN-based blue light-emitting diodes (LEDs) was enhanced by a self-assembled monolayer (SAM) of silica submicron spheres. The silica spheres were synthesized with various spherical sizes via the ammonia-catalyzed hydrolysis and condensation of tetraethyl orthosilicate in water/ethanol solutions. Hexagonal closely-packed (HCP) silica sphere monolayer was formed onto the indium tin oxide layer of the LED by a spin coating process. The size effect of silica spheres on the light-extraction efficiency (LEE) of GaN-based LEDs was theoretically studied and their optimum size was determined. The simulation results showed that the use of silica spheres can improve the LEE by 1.1-1.32 times compared to the conventional LEDs. The light output power of the LED with 650-nm-thick SAM of HCP silica spheres was experimentally enhanced by 1.28 and 1.23 times under the injection currents of 100 and 350 mA, respectively. By employing the SAM of HCP silica spheres, the directional emission pattern was relatively converged, indicating a reasonable consistency with the simulation result.