Open AccessElectroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays
Author(s) -
Yu Fei Chan,
Wei Ming Su,
Chang Xing Zhang,
Zheng Wang,
Ying Tang,
Xiaoqi Sun,
Hai Jun Xu
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.024280
Subject(s) - materials science , electroluminescence , optoelectronics , diode , light emitting diode , current density , heterojunction , nanoporous , voltage , reverse leakage current , wafer , nanotechnology , schottky diode , physics , layer (electronics) , quantum mechanics
ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm(2) at 2.5 V, leakage current density of ~0.15 mA/cm(2) and rectifying ratio of ~121 at ± 2.5 V. The electron transport across nanohetreostructure obeys the trap-charge-limit current model. Moreover, strong white light electroluminescence from ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.