Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays | Zendy

Yu Fei Chan | Zendy; Wei Ming Su | Zendy; Chang Xing Zhang | Zendy; Zheng Wu | Zendy; Ying Tang | Zendy; Xiaoqi Sun | Zendy; Hai Jun Xu | Zendy

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Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays

Author(s) -

Yu Fei Chan,

Wei Ming Su,

Chang Xing Zhang,

Zheng Wu,

Ying Tang,

Xiaoqi Sun,

Hai Jun Xu

Publication year - 2012

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.024280

Subject(s) - materials science , electroluminescence , optoelectronics , diode , light emitting diode , current density , heterojunction , nanoporous , voltage , reverse leakage current , wafer , nanotechnology , schottky diode , physics , layer (electronics) , quantum mechanics

ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm(2) at 2.5 V, leakage current density of ~0.15 mA/cm(2) and rectifying ratio of ~121 at ± 2.5 V. The electron transport across nanohetreostructure obeys the trap-charge-limit current model. Moreover, strong white light electroluminescence from ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.

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