Open AccessImprovement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating
Author(s) -
Suihu Dang,
Chunxia Li,
Wei Jia,
Zhuxia Zhang,
Tianbao Li,
Peide Han,
Bingshe Xu
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.023290
Subject(s) - materials science , indium tin oxide , grating , optoelectronics , rigorous coupled wave analysis , light emitting diode , optics , total internal reflection , nanostructure , plasmon , diode , diffraction grating , nanotechnology , layer (electronics) , physics
Based on the analysis of the evanescent wave from total internal reflection, a light-emitting diode (LED) structure with a plasmonic Ag nanostructure and indium tin oxide (ITO) grating was proposed to enhance the extraction efficiency. The two-dimensional finite-difference time-domain method was used to study the spectral properties of the hybrid structure and the effects of structure parameters on extraction enhancement. The results demonstrate that the plasmonic Ag nanostructure can couple the evanescent wave to a propagation wave around the GaN/ITO interface, and then the photons are scattered out of the LED chips by the ITO grating with high extraction efficiency. Under the optimal parameters, the light extraction efficiency can reach approximately three times the original value at a relatively longer wavelength.