Open AccessElectro-optofluidics: achieving dynamic control on-chip
Author(s) -
Zhi Liu,
Weixuan Hu,
Shaojian Su,
Chong Li,
Chuanbo Li,
Chunlai Xue,
Yaming Li,
Yong Zuo,
Buwen Cheng,
Qiming Wang
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.022327
Subject(s) - electroluminescence , materials science , photoluminescence , optoelectronics , spontaneous emission , chemical vapor deposition , heterojunction , light emitting diode , diode , doping , radiative transfer , silicon , optics , layer (electronics) , nanotechnology , laser , physics
Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n(+)(-)Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 μm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.