High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide | Zendy

Dazeng Feng | Zendy; Shirong Liao | Zendy; Hong Liang | Zendy; Joan Fong | Zendy; Bhavin Bijlani | Zendy; Roshanak Shafiiha | Zendy; B.J. Luff | Zendy; Ying Luo | Zendy; J. E. Cunningham | Zendy; Ashok V. Krishnamoorthy | Zendy; Mehdi Asghari | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

Author(s) -

Dazeng Feng,

Shirong Liao,

Hong Liang,

Joan Fong,

Bhavin Bijlani,

Roshanak Shafiiha,

B.J. Luff,

Ying Luo,

J. E. Cunningham,

Ashok V. Krishnamoorthy,

Mehdi Asghari

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.022224

Subject(s) - extinction ratio , silicon on insulator , materials science , optics , insertion loss , wavelength , optoelectronics , electro absorption modulator , waveguide , optical modulator , bandwidth (computing) , silicon , physics , phase modulation , semiconductor , telecommunications , semiconductor laser theory , quantum dot laser , computer science , phase noise

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research