Open AccessHigh speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide
Author(s) -
Dazeng Feng,
Shirong Liao,
Hong Liang,
Joan Fong,
Bhavin J. Bijlani,
Roshanak Shafiiha,
B.J. Luff,
Ying Luo,
J. E. Cunningham,
Ashok V. Krishnamoorthy,
Mehdi Asghari
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.022224
Subject(s) - silicon on insulator , extinction ratio , materials science , optics , electro absorption modulator , insertion loss , optoelectronics , wavelength , waveguide , optical modulator , bandwidth (computing) , absorption (acoustics) , silicon , phase modulation , physics , semiconductor , telecommunications , semiconductor laser theory , quantum dot laser , computer science , phase noise
We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.