Significant infrared lateral photovoltaic effect in Mn-doped ZnO diluted magnetic semiconducting film | Zendy

Jing Lü | Zendy; Hui Wang | Zendy

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Significant infrared lateral photovoltaic effect in Mn-doped ZnO diluted magnetic semiconducting film

Author(s) -

Jing Lü,

Hui Wang

Publication year - 2012

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.021552

Subject(s) - materials science , doping , infrared , photovoltaic effect , optoelectronics , thin film , semiconductor , laser , photovoltaic system , wavelength , optics , nanotechnology , physics , ecology , biology

Mn-doped ZnO has attracted considerable attention as an important kind of diluted magnetic semiconductors (DMSs). Here we report a new finding of lateral photovoltaic effect (LPE) in Mn-doped ZnO thin film based on DMS/SiO2/Si structure. Remarkably the induced LPE laser can be extended to infrared region in Mn-doped ZnO film. Besides we studied the dependence of the lateral photovoltage (LPV) position sensitivity on the laser wavelength and optical power by modulating the two factors and give a complete theoretical analysis. The LPE observation adds a significant new functionality to this DMS material and suggests Mn-doped ZnO a potential candidate for versatile devices.

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