Open AccessEnhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction
Author(s) -
Nishuang Liu,
Weiwei Tian,
Xianghui Zhang,
Jun Su,
Qi Zhang,
Yihua Gao
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.020748
Subject(s) - materials science , ultraviolet , nanowire , photoconductivity , optoelectronics , irradiation , band diagram , photodetector , optics , electron , band gap , physics , quantum mechanics , nuclear physics
The giant improvement of ultraviolet response behavior of a conventional GaN p-n film structured detector by the incorporation of slanted GaN nanowires is reported. The GaN nanowires/p-n film structure shows great photoresponse performance, exhibiting a short response time <0.1 s and a high sensitivity, being stable and reproducible with an on/off current contrast ratio as high as 1800 at zero bias under 365 nm ultraviolet light irradiation. Via carefully analyzing the experiment result and the band diagram of the device, the enhancement can be predominantly attributed to the photogenerated electrons in the slanted GaN nanowires.