Open AccessHigh-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
Author(s) -
Huapu Pan,
Solomon Assefa,
William M. J. Green,
Daniel M. Kuchta,
Clint L. Schow,
Alexander V. Rylyakov,
Benjamin G. Lee,
Christian Baks,
Steven M. Shank,
Yurii A. Vlasov
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.018145
Subject(s) - cmos , silicon on insulator , photodetector , waveguide , silicon photonics , materials science , optoelectronics , amplifier , bit error rate , photonics , optical power , nanophotonics , optics , electrical engineering , electronic engineering , silicon , physics , engineering , laser , channel (broadcasting)
The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.