Open AccessSingle-mode GaN nanowire lasers
Author(s) -
Qiming Li,
Jeremy Benjamin Wright,
Weng W. Chow,
Ting Shan Luk,
Igal Brener,
L. F. Lester,
George T. Wang
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.017873
Subject(s) - materials science , lasing threshold , laser linewidth , nanowire , optoelectronics , laser , optics , semiconductor laser theory , resonator , active laser medium , single mode optical fiber , laser power scaling , semiconductor , physics , wavelength
We demonstrate stable, single-frequency output from single, as-fabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ~0.12 nm and >18 dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth.